- heterostructure field-effect transistor
- High frequency electronics: HFET
Универсальный русско-английский словарь. Академик.ру. 2011.
Универсальный русско-английский словарь. Академик.ру. 2011.
Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… … Wikipedia
Transistor a effet de champ — Transistor à effet de champ Circuit électronique avec transistor à effet de champ Un transistor à effet de champ (FET pour Field Effect Transistor) est un dispositif semiconducteur de la famille des transistors. Sa particularité est d utiliser un … Wikipédia en Français
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
Transistor à effet de champ — Circuit électronique avec transistor à effet de champ Un transistor à effet de champ (FET pour Field Effect Transistor) est un dispositif semiconducteur de la famille des transistors. Sa particularité est d utiliser un champ électrique pour… … Wikipédia en Français
Transistor de efecto campo — P channel N channel Símbolos esquemáticos para los JFETs canal n y canal p. G=Puerta(Gate), D=Drenador(Drain) y S=Fuente(Source). El transistor de efecto campo (Field Effect Transistor o FET, en inglés) es en realidad una familia de transistores… … Wikipedia Español
High Electron Mobility Transistor — HEMT stands for High Electron Mobility Transistor, and is also called heterostructure FET (HFET) or modulation doped FET (MODFET). A HEMT is a field effect transistor incorporating a junction between two materials with different band gaps (i.e. a … Wikipedia
Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… … Wikipedia
Transistores HEMT — Sección de un transitor pHEMT de composición GaAs/AlGaAs/InGaAs Los HEMT, acrónimo del inglés High electron mobility transistor (Transistor de alta movilidad de electrones), también conocidos como HFET, acrónimo de Heterostructure FET (FET de… … Wikipedia Español
Light-emitting diode — LED redirects here. For other uses, see LED (disambiguation). Light emitting diode Red, pure green and blue LEDs of the 5mm diffused type Type Passive, optoelectronic Working principle Electr … Wikipedia
Gallium(III) arsenide — Chembox new Name = Gallium arsenide ImageFile = Gallium arsenide.jpg ImageFile1 = Gallium arsenide unit cell 3D balls.png IUPACName = Gallium arsenide Section1 = Chembox Identifiers CASNo = 1303 00 0 SMILES = Ga#As Section2 = Chembox Properties… … Wikipedia
Gallium(III) nitride — Chembox new Name = Gallium(III) nitride IUPACName = Gallium(III) nitride OtherNames = None Listed. Name = Section1 = Chembox Identifiers CASNo = 25617 97 4 Section2 = Chembox Properties Formula = GaN MolarMass = 83.7297 g/mol Appearance = Yellow… … Wikipedia